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Silicon carbide (SiC) is a material that has been identified as a key ingredient in the next generation of power devices due to its superior properties when compared to other semiconductors. Its excellent thermal stability, high electron mobility, and high breakdown voltage make SiC an attractive material for use in power electronics, particularly in high-temperature and high-power applications.
According to a recent market research report, SiC power devices are expected to witness significant growth in demand over the next few years, driven by the increasing adoption of electric vehicles, renewable energy systems, and the need for high-performance power electronics in various industrial sectors.
To meet the growing demand for SiC-based devices, the production capacity of SiC must increase significantly, and new production facilities must be planned and built. Currently, the global SiC production capacity is estimated to be around 1 million wafers per year, while the projected demand for SiC wafers is expected to reach 10 million wafers per year by 2025.
| 60# | F.C | Fe2O3 | ||
| 65# | 60min | 15-20 | 8-12 | 3.5max |
| 70# | 65min | 15-20 | 8-12 | 3.5max |
| 75# | 70min | 15-20 | 8-12 | 3.5max |
| 80# | 75min | 15-20 | 8-12 | 3.5max |
| 85# | 80min | 3-6 | 3.5max | |
| 90# | 85min | 2.5max | 3.5max | |
| 95# | 90min | 1.0max | 1.2max | |
| 97# | 95min | 0.6max | 1.2max | |
The growing demand for SiC devices is an opportunity for global semiconductor players to invest and expand their production capacity. With continued innovation in SiC manufacturing processes and increased SiC production capacity, it is possible to accelerate the adoption of SiC-based devices and realize the full potential of SiC technology. The future of power electronics is tied to SiC, and it is imperative that we increase our investment in SiC production to meet the demands of the future.
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